{"title":"MEMS液态金属晶圆微带到微带的过渡","authors":"Xiaoguang Liu, L. Katehi, D. Peroulis","doi":"10.1109/MWSYM.2008.4633098","DOIUrl":null,"url":null,"abstract":"A novel approach for creating an RF MEMS switch in the form of a microstrip-to-microstrip liquid-metal transition is presented. A slug of non-toxic liquid metal that controllably fills a through-wafer via is the key component of the switch. The large contact area between this slug and the solid microstrip lines renders this design an excellent candidate for high-power switching and particularly for hot-switching applications. With the slug inside the via the switch presents a measured insertion loss of 0.24 and 1.1 dB up to 5 and 10 GHz respectively. When the slug is removed from the via the switch isolation is measured to be more than 20 dB up to 7 GHz. The fabrication technology and critical trade-offs between RF and microfluidic performances are discussed in the paper. The slug movement is controlled by an external micropump. The recent advances in microfluidics have resulted in a large variety of practical micropumps that may be monolithically integrated with such switching designs.","PeriodicalId":273767,"journal":{"name":"2008 IEEE MTT-S International Microwave Symposium Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"MEMS liquid metal through-wafer microstrip to microstrip transition\",\"authors\":\"Xiaoguang Liu, L. Katehi, D. Peroulis\",\"doi\":\"10.1109/MWSYM.2008.4633098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel approach for creating an RF MEMS switch in the form of a microstrip-to-microstrip liquid-metal transition is presented. A slug of non-toxic liquid metal that controllably fills a through-wafer via is the key component of the switch. The large contact area between this slug and the solid microstrip lines renders this design an excellent candidate for high-power switching and particularly for hot-switching applications. With the slug inside the via the switch presents a measured insertion loss of 0.24 and 1.1 dB up to 5 and 10 GHz respectively. When the slug is removed from the via the switch isolation is measured to be more than 20 dB up to 7 GHz. The fabrication technology and critical trade-offs between RF and microfluidic performances are discussed in the paper. The slug movement is controlled by an external micropump. The recent advances in microfluidics have resulted in a large variety of practical micropumps that may be monolithically integrated with such switching designs.\",\"PeriodicalId\":273767,\"journal\":{\"name\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2008.4633098\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2008.4633098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MEMS liquid metal through-wafer microstrip to microstrip transition
A novel approach for creating an RF MEMS switch in the form of a microstrip-to-microstrip liquid-metal transition is presented. A slug of non-toxic liquid metal that controllably fills a through-wafer via is the key component of the switch. The large contact area between this slug and the solid microstrip lines renders this design an excellent candidate for high-power switching and particularly for hot-switching applications. With the slug inside the via the switch presents a measured insertion loss of 0.24 and 1.1 dB up to 5 and 10 GHz respectively. When the slug is removed from the via the switch isolation is measured to be more than 20 dB up to 7 GHz. The fabrication technology and critical trade-offs between RF and microfluidic performances are discussed in the paper. The slug movement is controlled by an external micropump. The recent advances in microfluidics have resulted in a large variety of practical micropumps that may be monolithically integrated with such switching designs.