氚在HTR-PM材料中扩散行为的第一性原理研究:从框架到初步结果

Chao Fang, Wenyi Wang, Hongyu Chen, C. Li
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摘要

高温堆-卵石堆(HTR-PM)是一种典型的高温气冷堆[1]。氚的β-辐射非常有害,半衰期长,是反应堆中最重要的放射性核素之一。在HTR-PM中,碳化硅(SiC)是三各向同性(TRISO)颗粒的主要屏障,以防止氚扩散到初级电路中[2]。当氚进入一次回路并循环到蒸汽发生器(SG)时,Incoloy800H合金是防止氚扩散到二次回路的另一重要材料[3]。在分析HTR-PM一次回路和二次回路中氚的源项时,了解氚在SiC和Incoloy800H中的扩散行为是非常重要和必要的,而且详细的扩散机制也是必不可少的,这是传统的现象学分析和保守估计无法得到的。为了解决这一难题,建立了一个基于ab-initio方法的框架。本文首先给出了ab-initio理论的详细原理及其在扩散路径、势垒能计算中的实际应用。然后求出最大的物理路径和最小的能垒,作为扩散活化能。SiC和Incoloy800H中氚的活化能计算结果分别为0.442eV和0.577ev。并将理论计算结果与实验数据进行了比较,两者吻合较好。这些结果有助于理解氚在高温超导材料中的扩散行为,并可用于指导高温超导材料中氚源项的分析,这是首次从微观角度进行研究。
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First-Principles Studies of Diffusion Behaviors of Tritium in HTR-PM Materials: From Framework to Preliminary Result
High Temperature Reactor-Pebblebed Modules (HTR-PM) is a typical high-temperature gas cooled reactor (HTGR) [1]. Tritium is one of the most important radionuclides in reactors owing to its very harmful β-radiation and long half-life. In the HTR-PM, Silicon carbide (SiC) is the main barrier of triisotropic (TRISO) particles to prevent the diffusion of Tritium into the primary circuit [2]. When Tritium into the primary circuit and circulate to Steam Generator (SG), the Incoloy800H alloy is another important material to prevent the diffusion of Tritium into the secondary circuit [3]. When analyzing the source term of Tritium in HTR-PM primary and secondary circuit, it is important and necessary to know the diffusion behavior of Tritium in SiC and Incoloy800H and furthermore, the detail mechanism of diffusion is also essential, which could not be obtained from traditional phenomenological analysis and conservative estimation. In order to solve this challenge, a framework with ab-initio methods is established. In this paper, the detail theory of ab-initio theory and the actual usage in the calculation of the diffusion path, barrier energy are given firstly. And then, the most physical path and the minimum energy barrier will be determined, which can be considered as the diffusion activation energy. The calculated results of activation energy of Tritium in SiC and Incoloy800H are 0.442eV and 0.757eV respectively. Furthermore, the theoretical results are compared with the experimental data, and it is found that both are in agreement with each other. These results are very helpful for understanding the diffusion behaviors of Tritium in HTR-PM materials and can be used to guide the tritium source term analysis in HTR-PM, which are first studied from a micro perspective.
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