{"title":"MOCVD生长立方氮化镓薄膜的结构研究","authors":"H. Vilchis, V. M. Sanchez-R, A. Escobosa","doi":"10.1109/ICCDCS.2012.6188897","DOIUrl":null,"url":null,"abstract":"In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials can be suitable to the realization of optoelectronic devices.","PeriodicalId":125743,"journal":{"name":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structural studies of cubic GaN films grown by MOCVD\",\"authors\":\"H. Vilchis, V. M. Sanchez-R, A. Escobosa\",\"doi\":\"10.1109/ICCDCS.2012.6188897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials can be suitable to the realization of optoelectronic devices.\",\"PeriodicalId\":125743,\"journal\":{\"name\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2012.6188897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2012.6188897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Structural studies of cubic GaN films grown by MOCVD
In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials can be suitable to the realization of optoelectronic devices.
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