一个3.5ns CMOS 64K ECL RAM在77/spl度/K

{"title":"一个3.5ns CMOS 64K ECL RAM在77/spl度/K","authors":"S. Schuster, T. Chappell, B. Chappell, J. Allan, J. Sun, S. Klepner, R. Franch, P. Greier, P. Restle","doi":"10.1109/VLSIC.1988.1037403","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":115887,"journal":{"name":"Symposium 1988 on VLSI Circuits","volume":"263 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A 3.5ns CMOS 64K ECL RAM at 77/spl deg/K\",\"authors\":\"S. Schuster, T. Chappell, B. Chappell, J. Allan, J. Sun, S. Klepner, R. Franch, P. Greier, P. Restle\",\"doi\":\"10.1109/VLSIC.1988.1037403\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":115887,\"journal\":{\"name\":\"Symposium 1988 on VLSI Circuits\",\"volume\":\"263 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Symposium 1988 on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.1988.1037403\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium 1988 on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1988.1037403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}