{"title":"利用电子束、x射线和光学技术的亚0.2微米栅极光刻技术综述","authors":"L. Studebaker","doi":"10.1109/GAAS.1994.636993","DOIUrl":null,"url":null,"abstract":"The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the \"best\" technology option for a given application.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Sub-0.2 micron gate lithography using E-beam, X-ray and optical technologies-an overview\",\"authors\":\"L. Studebaker\",\"doi\":\"10.1109/GAAS.1994.636993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the \\\"best\\\" technology option for a given application.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sub-0.2 micron gate lithography using E-beam, X-ray and optical technologies-an overview
The number of options for performing sub-0.2 um GaAs FET gate lithography has expanded recently to include shaped-beam e-beam systems, prototype X-ray steppers and optical steppers using phase-shift mask (PSM) technology. An overview of the alternatives is presented which may aid in selection of the "best" technology option for a given application.
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