{"title":"基于t型多晶硅光栅的低噪声0.18 μm标准cmos硅雪崩光电二极管","authors":"Kuo-Yu Lee, Yin-Jung Chang, Jau-Horng Chen","doi":"10.1109/OECC48412.2020.9273624","DOIUrl":null,"url":null,"abstract":"A 0.18-µm CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.","PeriodicalId":433309,"journal":{"name":"2020 Opto-Electronics and Communications Conference (OECC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Noise 0.18-μm Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating\",\"authors\":\"Kuo-Yu Lee, Yin-Jung Chang, Jau-Horng Chen\",\"doi\":\"10.1109/OECC48412.2020.9273624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 0.18-µm CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.\",\"PeriodicalId\":433309,\"journal\":{\"name\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 Opto-Electronics and Communications Conference (OECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OECC48412.2020.9273624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 Opto-Electronics and Communications Conference (OECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OECC48412.2020.9273624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low Noise 0.18-μm Standard-CMOS-Based Silicon Avalanche Photodiode with a T-shaped Polysilicon Grating
A 0.18-µm CMOS silicon avalanche photodiode with a polysilicon grating is presented. The unamplified responsivity is 29.89% higher than that without the grating. The structure-enabled doping profile results in a dark current of 1 pA.
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