基于填充GST材料的狭缝纳米光束谐振器的非易失性光存储器

2018 Asia Communications and Photonics Conference (ACP) Pub Date : 2018-10-01 DOI:10.1109/ACP.2018.8596243

Hao Hu, Hanyu Zhang, Linjie Zhou, Youhua Xu, Liangjun Lu, Jianping Chen, B. Rahman

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引用次数: 5

摘要

我们提出了一种基于Ge2Sb2Te5 (GST)填充硅槽纳米束腔的多级相变存储器件。仿真结果表明，纳米光束共振可以通过GST的相位变化逐步调谐，从而实现光学数据的多级存储。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Non-volatile optical memory based on a slot nanobeam resonator filled with GST material

We propose a multi-level phase-change memory device based on a Ge2Sb2Te5 (GST)-filled silicon slot nanobeam cavity. Simulations show that the nanobeam resonance can be tuned step-by-step through phase change of the GST, allowing for multi-level storage of optical data.

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2018 Asia Communications and Photonics Conference (ACP)

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