基于0.09 μm CMOS技术的IEEE 802.1 la无线接入频率合成射频源设计

2010 Annual IEEE India Conference (INDICON) Pub Date : 2010-12-01 DOI:10.1109/INDCON.2010.5712665

K. K. Mallik, Rupanjal Deb Barma, K. N. Reddy

{"title":"基于0.09 μm CMOS技术的IEEE 802.1 la无线接入频率合成射频源设计","authors":"K. K. Mallik, Rupanjal Deb Barma, K. N. Reddy","doi":"10.1109/INDCON.2010.5712665","DOIUrl":null,"url":null,"abstract":"A Multi-band Synthesizer suitable for 5 GHz IEEE 802.11a upper, middle and lower frequency bands has been designed and performance evaluated for fabrication using 0.09 μm CMOS technology. A fast 6μs settling time and superior −139.9dBc/Hz @ 1MHz offset phase noise have been observed by simulation. A linear VCO transfer characteristics has been observed over the frequency range. VCO outputs are in phase quadrature and 0.09 μm CMOS technology makes the design energy efficient.","PeriodicalId":109071,"journal":{"name":"2010 Annual IEEE India Conference (INDICON)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A design of frequency synthesized RF-source for IEEE 802.1 la wireless access for 0.09 μm CMOS technology\",\"authors\":\"K. K. Mallik, Rupanjal Deb Barma, K. N. Reddy\",\"doi\":\"10.1109/INDCON.2010.5712665\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Multi-band Synthesizer suitable for 5 GHz IEEE 802.11a upper, middle and lower frequency bands has been designed and performance evaluated for fabrication using 0.09 μm CMOS technology. A fast 6μs settling time and superior −139.9dBc/Hz @ 1MHz offset phase noise have been observed by simulation. A linear VCO transfer characteristics has been observed over the frequency range. VCO outputs are in phase quadrature and 0.09 μm CMOS technology makes the design energy efficient.\",\"PeriodicalId\":109071,\"journal\":{\"name\":\"2010 Annual IEEE India Conference (INDICON)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Annual IEEE India Conference (INDICON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INDCON.2010.5712665\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Annual IEEE India Conference (INDICON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INDCON.2010.5712665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

设计了一种适用于5 GHz IEEE 802.11a上、中、下频段的多波段合成器，并采用0.09 μm CMOS工艺进行了性能评估。仿真结果表明，该方法具有6μs的快速沉降时间和- 139.9dBc/Hz @ 1MHz的优越相位噪声。在整个频率范围内观察到线性压控振荡器的传输特性。压控振荡器输出为相位正交，0.09 μm CMOS技术使设计节能。

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A design of frequency synthesized RF-source for IEEE 802.1 la wireless access for 0.09 μm CMOS technology

A Multi-band Synthesizer suitable for 5 GHz IEEE 802.11a upper, middle and lower frequency bands has been designed and performance evaluated for fabrication using 0.09 μm CMOS technology. A fast 6μs settling time and superior −139.9dBc/Hz @ 1MHz offset phase noise have been observed by simulation. A linear VCO transfer characteristics has been observed over the frequency range. VCO outputs are in phase quadrature and 0.09 μm CMOS technology makes the design energy efficient.

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2010 Annual IEEE India Conference (INDICON)

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