单键(R)氧化物中电子俘获的物理表征

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698857

O. Gruber, P. Paillet, O. Musseau, C. Marcandella, B. Aspar, A. Auberton-Herve

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引用次数: 27

摘要

本文研究了单键(R)氧化物的俘获特性。利用点接触和MOS晶体管测量了其在不同辐照条件下的辐射响应。得到的结果显示了空穴和电子捕获，正如先前在SIMOX中观察到的那样。但在Unibond(R)的情况下，在非常高的剂量下，阈值电压有一个正的移动。使用一个简单的模型，我们通过考虑第二种类型的电子陷阱来解释这种转变。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physical characterization of electron trapping in Unibond(R) oxides

In this work, we study the trapping properties of Unibond(R) oxides. We measure its radiative response under different irradiation conditions using both point-contact and MOS transistors. The results obtained show both hole and electron trapping, as previously observed in SIMOX. But in the Unibond(R) case, there is a positive shift of the threshold voltage at very high doses. Using a simple model, we explain this shift by considering a second type of electron traps.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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