一个完整的GaAs HEMT单芯片数据接收器,数据速率为40 Gbit/s

M. Lang, Z. Wang, A. Thiede, H. Lienhart, T. Jakobus, W. Bronner, J. Hornung, A. Hulsmann
{"title":"一个完整的GaAs HEMT单芯片数据接收器,数据速率为40 Gbit/s","authors":"M. Lang, Z. Wang, A. Thiede, H. Lienhart, T. Jakobus, W. Bronner, J. Hornung, A. Hulsmann","doi":"10.1109/GAAS.1998.722624","DOIUrl":null,"url":null,"abstract":"Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates\",\"authors\":\"M. Lang, Z. Wang, A. Thiede, H. Lienhart, T. Jakobus, W. Bronner, J. Hornung, A. Hulsmann\",\"doi\":\"10.1109/GAAS.1998.722624\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722624\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722624","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

利用我们的0.2 /spl mu/m AlGaAs-GaAs-AlGaAs量子阱HEMT技术,我们设计、制造并表征了一个由时钟恢复、数据决策和2:4解复用电路组成的单芯片。该芯片能够接收40 Gbit/s的数据流,并将其转换为4位并行数据信号。本文给出的结果是在硅片上测量的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A complete GaAs HEMT single chip data receiver for 40 Gbit/s data rates
Using our 0.2 /spl mu/m AlGaAs-GaAs-AlGaAs quantum well HEMT technology, we have designed, manufactured and characterized a single chip comprising a clock recovery, a data decision and a 2:4 demultiplexer circuit. The chip is able to receive a data stream of 40 Gbit/s and converts it into a four bit parallel data signal. The results presented here have been measured on wafer.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Monolithic micromachined planar spiral transformer Drain barrier lowering in HEMTs X-band heterostructure interband tunneling FET (HITFET) VCOs High power heterojunction GaAs switch IC with P-1 dB of more than 38 dBm for GSM application Accurate and efficient small-signal modeling of active devices using artificial neural networks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1