单芯片宽带CMOS功率放大器和跟踪器，总效率为37%，适用于TDD/FDD LTE应用

2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2016-05-22 DOI:10.1109/RFIC.2016.7508316

F. Balteanu

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引用次数: 2

摘要

本文提出了一种2.3GHz - 2.7GHz宽带CMOS FDD/TDD LTE Band 7。38、40和41功率放大器(PA)与快速包络跟踪器(ET)完全集成在单个0.18μm CMOS芯片上。PA和跟踪器在26.5dBm和-39dBc ACLR1下实现37%的总效率。整个设计包括输入/输出匹配使用约2.7mm2的有源硅面积。

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Single die broadband CMOS power amplifier and tracker with 37% overall efficiency for TDD/FDD LTE applications

This paper presents a 2.3GHz - 2.7GHz broadband CMOS FDD/TDD LTE Band 7. 38, 40 and 41 power amplifier (PA) fully integrated with a fast envelope tracker (ET) on a single 0.18μm CMOS die. The PA and the tracker achieve a 37% overall efficiency for 26.5dBm and -39dBc ACLR1. The entire design including the input/output match uses an active silicon area around 2.7mm2.

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2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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