利用MBE生长调制ZnCdSe/ZnSe超晶格的蓝绿电子束泵浦垂直腔面发射激光器

N. Basov, E. Dianov, V. Kozlovsky, A. Krysa, A. Nasibov, Y. Popov, A. Prokhorov, P. Trubenko, E. Shcherbakov
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引用次数: 0

摘要

在垂直腔面发射激光器(VCSEL)制造中使用宽带隙II-VI半导体及其三元和四元合金,为其设计和应用开辟了新的可能性。其中一个很有前途的应用是实现大屏幕彩色高清晰度电视(HDTV)激光投影系统,以及平板彩色显示器[1,2]。在这种情况下,II-VI VCSEL的主要优点之一是仅基于这种材料创建全彩色高清电视激光屏幕的可能性。体II-VI化合物最近被用于激光阴极射线管(LCRT)和彩色激光电视系统[3]的首次成功演示。然而,该方案的局限性之一是足够高的电子束电流阈值,特别是对于室温操作。
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Blue-Green Electron Beam Pumped Vertical-Cavity Surface-Emitting Laser Using MBE Grown Modulated ZnCdSe/ZnSe Superlattice
The use of a broad-bandgap II-VI semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting laser (VCSEL) fabrication open a new additional possibilities for their design and applications. In particular, one of the promising using is the realization of a large screen color high definition TV (HDTV) laser projection systems, and flat panel color displays [1,2]. One of the main advantages of the II-VI VCSEL's, in this case, is the possibility of the full color HDTV laser screen creation based only on this materials. The bulk II-VI compounds were used recently for the first successful demonstration of the laser cathode ray tube (LCRT) and color laser TV system [3]. However, one of the limitations of this scheme was the sufficiently high E-beam current threshold, in particular, for the room-temperature operation.
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