{"title":"测定二极管大信号负电阻的简单方法","authors":"S. Ahmad, J. Freyer, M. Claassen","doi":"10.1049/IJ-SSED:19770017","DOIUrl":null,"url":null,"abstract":"A new method is presented for the determination of the large-signal negative resistance of baritt diodes. The simplicity is emphasised in terms of the ususal current/voltage characteristic measurements required. The diodes can thus be characterised, under actual operation conditions, in a microwave circuit, with the help of the present method.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Simple method of determining the large-signal negative resistance of baritt diodes\",\"authors\":\"S. Ahmad, J. Freyer, M. Claassen\",\"doi\":\"10.1049/IJ-SSED:19770017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method is presented for the determination of the large-signal negative resistance of baritt diodes. The simplicity is emphasised in terms of the ususal current/voltage characteristic measurements required. The diodes can thus be characterised, under actual operation conditions, in a microwave circuit, with the help of the present method.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19770017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19770017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simple method of determining the large-signal negative resistance of baritt diodes
A new method is presented for the determination of the large-signal negative resistance of baritt diodes. The simplicity is emphasised in terms of the ususal current/voltage characteristic measurements required. The diodes can thus be characterised, under actual operation conditions, in a microwave circuit, with the help of the present method.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
