Influence of deep level defects on photoelectrical processes in p-n junction solar cells with porous silicon antireflection coating

In this paper we investigated n+-p-junction silicon solar cells with antireflection por-Si film, formed on the front surface by anodic electrochemical etching. Photocurrent of the samples is measured. Also we used current deep level transient spectroscopy method. We found that defects with deep levels, appeared during formation of por-Si layer strongly affect photocurrent spectra of the cells due to the amplification of recombination of photogenerated charge carriers.