M. Yoshimaru, N. Inoue, M. Itoh, H. Kurogi, H. Tamura, N. Hirasita, F. Ichikawa, M. Ino
{"title":"采用原位HF气相清洗的LPCVD技术在多晶硅电极上选择性地沉积了高质量的超薄Si/sub - 3/N/sub - 4/薄膜","authors":"M. Yoshimaru, N. Inoue, M. Itoh, H. Kurogi, H. Tamura, N. Hirasita, F. Ichikawa, M. Ino","doi":"10.1109/IEDM.1992.307358","DOIUrl":null,"url":null,"abstract":"Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High quality ultra thin Si/sub 3/N/sub 4/ film selectively deposited on poly-Si electrode by LPCVD with in situ HF vapor cleaning\",\"authors\":\"M. Yoshimaru, N. Inoue, M. Itoh, H. Kurogi, H. Tamura, N. Hirasita, F. Ichikawa, M. Ino\",\"doi\":\"10.1109/IEDM.1992.307358\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307358\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High quality ultra thin Si/sub 3/N/sub 4/ film selectively deposited on poly-Si electrode by LPCVD with in situ HF vapor cleaning
Si/sub 3/N/sub 4/ film deposited by LPCVD with in situ HF vapor cleaning has been applied to dielectric film of stacked capacitor. The composition of the Si/sub 3/N/sub 4/ film deposited on poly-Si electrode becomes stoichiometric. The film shows low leakage current and high electrical reliability. But it brings a new problem. Si/sub 3/N/sub 4/ film deposited using in situ HF vapor cleaning shows selective deposition on poly-Si electrode. The edge of poly-Si electrode is not covered by Si/sub 3/N/sub 4/ film. This problem is avoidable by carpeting Si/sub 3/N/sub 4/ film under poly-Si electrode. This process realizes further improvement of stacked capacitor dielectric film reliability.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
