F. Smith, A. Calawa, C. Chen, L. Mahoney, M. Manfra, J.C. Huang, F. Spooner
{"title":"微米和四分之一微米栅极GaAs MESFET的新型MBE缓冲器","authors":"F. Smith, A. Calawa, C. Chen, L. Mahoney, M. Manfra, J.C. Huang, F. Spooner","doi":"10.1109/CORNEL.1987.721232","DOIUrl":null,"url":null,"abstract":"A new buffer layer has been developed that eliminates backgating in GaAs MESFET's and substantially reduces short-channel effects in GaAs MESFET's with 0.27-/spl mu/m-long gates. The new buffer is grown by molecular beam epitaxy at a substrate temperature of 200/spl deg/C using Ga and As/sub 4/ beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFET's with a gate length of 0.27 /spl mu/m that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer.","PeriodicalId":247498,"journal":{"name":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","volume":"101 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"New MBE Buffer For Micron And Quarter-Micron Gate GaAs MESFET's\",\"authors\":\"F. Smith, A. Calawa, C. Chen, L. Mahoney, M. Manfra, J.C. Huang, F. Spooner\",\"doi\":\"10.1109/CORNEL.1987.721232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new buffer layer has been developed that eliminates backgating in GaAs MESFET's and substantially reduces short-channel effects in GaAs MESFET's with 0.27-/spl mu/m-long gates. The new buffer is grown by molecular beam epitaxy at a substrate temperature of 200/spl deg/C using Ga and As/sub 4/ beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFET's with a gate length of 0.27 /spl mu/m that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer.\",\"PeriodicalId\":247498,\"journal\":{\"name\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"volume\":\"101 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-08-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1987.721232\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1987.721232","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New MBE Buffer For Micron And Quarter-Micron Gate GaAs MESFET's
A new buffer layer has been developed that eliminates backgating in GaAs MESFET's and substantially reduces short-channel effects in GaAs MESFET's with 0.27-/spl mu/m-long gates. The new buffer is grown by molecular beam epitaxy at a substrate temperature of 200/spl deg/C using Ga and As/sub 4/ beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFET's with a gate length of 0.27 /spl mu/m that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer.
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