面板级封装的高密度互连工艺

A. Ostmann, F. Schein, M. Dietterle, Marc Kunz, K. Lang
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引用次数: 5

摘要

晶圆级扇出和3D系统级封装(3D SIP)等先进封装技术正在迅速渗透电子元件市场。最近降低成本的趋势是将工艺扩展到大型制造格式,称为面板级封装(PLP)。在一个由德国工业和研究合作伙伴组成的联盟中,开发了PLP的先进技术。该项目旨在将芯片嵌入有机层压板矩阵的3D sip集成工艺流程。首先,将带有Cu凸点$(100 \mu \ mathm {m}$间距)的6x6 mm2芯片放置在具有低热膨胀系数(CTE)的PCB核心层的孔中。它们通过有机薄膜的真空层压嵌入,填补了芯片和核心之间的小间隙,小到15 \mu \m}$。核心为以下过程的局部对齐提供了基准,限制了嵌入过程中的模具移位,并提供了显着的处理鲁棒性。开发最初是在305x256 mm2的面板格式上进行的,目标是最终尺寸为600x600 mm2。在嵌入式芯片$\mathrm{a}的顶部涂覆25 \mu \mathrm{m}$介质膜,并通过等离子体刻蚀暴露凹凸面。通过溅射镀铜,在芯片上形成无孔触点。通过紫外激光钻孔,在芯片周围形成高纵横比的通孔,以降低互连层。孔径为$17 \mathrm{m}$时,钻孔深度为$74 \mathrm{m}$(纵横比为4.4:1)。目前,使用新开发的电解质镀铜的微孔填充可以证明宽高比高达2.5:1。然后在$ $\mathrm{a}7 \mu \mathrm{m}$干膜光刻胶中,用新研制的激光直接成象(LDI)机演示了$ $4 \mu \mathrm{m}$ RDL结构的形成过程。
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High Density Interconnect Processes for Panel Level Packaging
Advanced packaging technologies like wafer-level fan-out and 3D System-in-Package (3D SIP) are rapidly penetrating the market of electronic components. A recent trend to reduce cost is the extension of processes to large manufacturing formats, called Panel Level Packaging (PLP). In a consortium of German partners from industry and research advanced technologies for PLP are developed. The project aims for an integrated process flow for 3D SIPs with chips embedded into an organic laminate matrix. At first 6x6 mm2 chips with Cu bumps $( 100 \mu \mathrm{m}$ pitch) are placed into holes of a PCB core layer with low coefficient of thermal expansion (CTE). They are embedded by vacuum lamination of thin organic films, filling the small gap down to $15 \mu \mathrm{m}$ between chips and core. The core provides fiducials for a local alignment of following processes, limits die shift during embedding and gives a remarkable handling robustness. Developments are initially performed on a 305x256 mm2 panel format, aiming for a final size of 600x600 mm2. On the top side of embedded chips $\mathrm{a}25 \mu \mathrm{m}$ dielectric film is applied and the bump surface is exposed by plasma etching. By sputtering and electroplating of Cu contacts to the chips are formed without via opening. High aspect ratio vias around the chip to lower interconnect layers are formed by UV laser drilling. At via diameters of $17 \mu mathrm{ma}$ drill hole depth of $74 \mu \mathrm{m}$ was achieved (aspect ration 4.4:1). Currently a microvia filling by Cu plating using a newly developed electrolyte could be demonstrated for aspect ratios up to 2.5:1. Then in $\mathrm{a}7 \mu \mathrm{m}$ dry film photo resist forming of $4 \mu \mathrm{m}$ RDL structures was demonstrated by a newly developed Laser Direct Imaging (LDI) machine.
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