{"title":"塞贝克效应成像提高短缺陷定位","authors":"M. Guo, Jinglong Li","doi":"10.1109/IPFA.2018.8452571","DOIUrl":null,"url":null,"abstract":"Seebeck effect usually comes with OBIRCH analysis. Thermal variation will be generated when the IR laser irradiates on IC. The thermal gradient will induce small electrical potential gradient on different metals, like metal bridge defect. So Seebeck Effect Imaging is an important supplymentary method when doing OBIRCH analysis. Here we used Seebeck Effect Imaging to improve short defect localization on 45nm Cu metal AUTO products.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Seebeck Effect Imaging to Improve Short Defect Localization\",\"authors\":\"M. Guo, Jinglong Li\",\"doi\":\"10.1109/IPFA.2018.8452571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Seebeck effect usually comes with OBIRCH analysis. Thermal variation will be generated when the IR laser irradiates on IC. The thermal gradient will induce small electrical potential gradient on different metals, like metal bridge defect. So Seebeck Effect Imaging is an important supplymentary method when doing OBIRCH analysis. Here we used Seebeck Effect Imaging to improve short defect localization on 45nm Cu metal AUTO products.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Seebeck Effect Imaging to Improve Short Defect Localization
Seebeck effect usually comes with OBIRCH analysis. Thermal variation will be generated when the IR laser irradiates on IC. The thermal gradient will induce small electrical potential gradient on different metals, like metal bridge defect. So Seebeck Effect Imaging is an important supplymentary method when doing OBIRCH analysis. Here we used Seebeck Effect Imaging to improve short defect localization on 45nm Cu metal AUTO products.
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