{"title":"在玻璃衬底上低温制备薄膜多晶硅太阳电池及其在a-Si:H/多晶硅串联太阳电池中的应用","authors":"K. Yamamoto, T. Suzuki, M. Yoshimi, A. Nakajima","doi":"10.1109/PVSC.1996.564215","DOIUrl":null,"url":null,"abstract":"The excellent high short circuit current density (Jsc) above 24 mA/cm/sup 2/ and the efficiency of 6.8% at the 6 /spl mu/m thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 /spl mu/nm)/polycrystalline-Si(6 /spl mu/m) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm/sup 2/. We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 /spl mu/m thick textured Si thin film showed an effective optical thickness of 67 /spl mu/m and corresponding effective optical pass length of 16 times the layer thickness.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"111 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell\",\"authors\":\"K. Yamamoto, T. Suzuki, M. Yoshimi, A. Nakajima\",\"doi\":\"10.1109/PVSC.1996.564215\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The excellent high short circuit current density (Jsc) above 24 mA/cm/sup 2/ and the efficiency of 6.8% at the 6 /spl mu/m thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 /spl mu/nm)/polycrystalline-Si(6 /spl mu/m) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm/sup 2/. We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 /spl mu/m thick textured Si thin film showed an effective optical thickness of 67 /spl mu/m and corresponding effective optical pass length of 16 times the layer thickness.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"111 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564215\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low temperature fabrication of thin film polycrystalline Si solar cell on the glass substrate and its application to the a-Si:H/polycrystalline Si tandem solar cell
The excellent high short circuit current density (Jsc) above 24 mA/cm/sup 2/ and the efficiency of 6.8% at the 6 /spl mu/m thin cell fabricated on glass substrate is demonstrated. This advantage of high Jsc was applied to the a-Si:H(0.3 /spl mu/nm)/polycrystalline-Si(6 /spl mu/m) tandem solar cell, which exhibits the efficiency of 10.4% and the Jsc of 11.6 mA/cm/sup 2/. We have found that the textured Si thin film can be prepared by adjusting the deposition conditions. The 4 /spl mu/m thick textured Si thin film showed an effective optical thickness of 67 /spl mu/m and corresponding effective optical pass length of 16 times the layer thickness.
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