0.15 μm GaN的39 GHz功率放大器

2020 4th Australian Microwave Symposium (AMS) Pub Date : 2020-02-01 DOI:10.1109/AMS48904.2020.9059531

V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich

{"title":"0.15 μm GaN的39 GHz功率放大器","authors":"V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich","doi":"10.1109/AMS48904.2020.9059531","DOIUrl":null,"url":null,"abstract":"In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.","PeriodicalId":257699,"journal":{"name":"2020 4th Australian Microwave Symposium (AMS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 39 GHz Power Amplifier in 0.15 μm GaN\",\"authors\":\"V. Tran, S. Chakraborty, Leigh E. Milner, S. Mahon, M. Heimlich\",\"doi\":\"10.1109/AMS48904.2020.9059531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.\",\"PeriodicalId\":257699,\"journal\":{\"name\":\"2020 4th Australian Microwave Symposium (AMS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 4th Australian Microwave Symposium (AMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AMS48904.2020.9059531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 4th Australian Microwave Symposium (AMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AMS48904.2020.9059531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一种采用WIN半导体最新推出的0.15 μm GaN HEMT工艺实现的39ghz功率放大器。还显示了4×100栅极宽度晶体管在39 GHz功率下的负载-拉力模拟。电磁仿真结果表明，该两级放大器在39 GHz时的功率增益为17 dB, PAE为21%，饱和输出功率为31 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A 39 GHz Power Amplifier in 0.15 μm GaN

In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 4th Australian Microwave Symposium (AMS)

自引率

0.00%

发文量

期刊最新文献

Uniplanar 2-D Butler Matrix for Multibeam Arrays Multi-Functional Structures for 4G/5G Antennas Utilizing Slot Geometry Design of a Receive-Only Simultaneous X/Ka Feed System for F/D=0.8 Offset Parabolic Reflectors Frequency-Agile Self-Diplexing Antenna Design of Two-Gain-Level Amplifier for $Ka$-Band Phase Shifters Using 0.15 μm GaAs pHEMT Process