{"title":"Sela-FIB样品制备新方法及其在110纳米及以上工艺节点晶圆制造失效分析中的应用研究","authors":"Z. Siping, H. Younan, E. Eddie, Khoo Ley Hong","doi":"10.1109/SMELEC.2006.380784","DOIUrl":null,"url":null,"abstract":"In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond\",\"authors\":\"Z. Siping, H. Younan, E. Eddie, Khoo Ley Hong\",\"doi\":\"10.1109/SMELEC.2006.380784\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380784\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380784","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Studies on A New Sela-FIB Sample Preparation Method and Its Application in Failure Analysis of Wafer Fabrication for 110nm Technology Node and Beyond
In this paper, a novel sample preparation method for obtaining high- resolution SEM profile is proposed. Both Sela fine cleave and FIB slice techniques have been used for SEM sample preparation. Using this new method, high-resolution 90 degrees SEM micrographs are provided. It has been applied in failure analysis to check Via gouging information without any charging problem, which helps us to reduce TEM analysis samples.
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