等离子体刻蚀晶圆充电过程中薄氧化物降解的新模型

1992 International Technical Digest on Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1992.307309

S. Fang, S. Murakawa, J. Mcvittie

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引用次数: 29

摘要

等离子体的不均匀性会导致表面充电和通过薄氧化物的破坏性电流。在多晶硅蚀刻中，晶圆上的表面电流可以防止损坏，直到在端点之前，在掩膜周围的晕区收集的电流会导致栅极充电和通过氧化物的过度隧道电流。在过度蚀刻过程中，由于收集面积小，额外的损坏是最小的。该模型得到了等离子体测量、SPICE模拟和蚀刻损伤结果的支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A new model for thin oxide degradation from wafer charging in plasma etching

Plasma nonuniformity can lead to surface charging and damaging currents through thin oxides. In poly-Si etching, surface currents across the wafer prevent damage until just before endpoint when current collected in halo regions around the mask can lead to gate charging and excessive tunneling current through the oxide. During overetching, additional damage is minimal because of the small collection area. This model is supported by plasma measurements, SPICE simulations, and etching damage results.<>

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1992 International Technical Digest on Electron Devices Meeting

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