关于半导体热电器件ZT = 1值可能的物理意义的评述

M. Vedernikov, Y. Ravich
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引用次数: 0

摘要

在热电能量转换中,热电系数Z的上限是否存在是一个重要的问题。在半导体热电学基础方面的发展过程中,人们对这一问题进行了积极的讨论,但一直没有得到解决。在长时间的沉默之后,它再次引起了人们的注意。C.B.Vining在ICT'92考虑了众所周知的事实,即所有实际热电器件的无量纲参数ZT/spl小于/1。他的结论是,人们不知道任何物理上的理由来认为这个值是一个特定的值。我们的论文指出了那些相当一般的假设,在这些假设下,半导体的ZT/spl在定性评价时为/1。结果还表明,对于ZT>1的半导体,ZT的增加对晶格热导率降低的依赖性弱于ZT<1的半导体。
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Remarks on a possible physical sense of the value ZT = 1 for semiconductor thermoelectrics
The problem of the existence of an upper limit of thermoelectric figure of merit Z is of principal importance for thermoelectric energy conversion. It was discussed actively during the period of development of basic aspects of semiconductor thermoelectricity but was not solved. After a long time of silence it attracts attention again. C.B.Vining at ICT'92 considered the well known fact that the dimensionless parameter ZT/spl les/1 for all real thermoelectrics. He concluded that one doesn't know any physical reasons to consider this value as a specific one. Our paper indicates those rather general assumptions at which ZT/spl ap/1 for semiconductors at a qualitative evaluation. It is shown too that the dependence of ZT increase on decrease of lattice thermal conductivity is weaker for semiconductors with ZT>1 than for one with ZT<1.
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