对地抽头进行尺寸调整以减少射频LNAs中的衬底噪声耦合

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320926

A. Sundaresan, T. Fiez, K. Mayaram

{"title":"对地抽头进行尺寸调整以减少射频LNAs中的衬底噪声耦合","authors":"A. Sundaresan, T. Fiez, K. Mayaram","doi":"10.1109/CICC.2006.320926","DOIUrl":null,"url":null,"abstract":"The influence of the sizing of ground taps on the noise injected into a 1.5GHz low noise amplifier (LNA), by a stepped buffer, for a heavily doped CMOS process is quantitatively examined. Precise modeling provides good agreement between measurements and simulations. A 10dB increase in isolation was achieved by scaling the area of the substrate contact by a factor of 400, and by increasing the proximity of the contacts to the sensitive transistors","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sizing Ground Taps to Minimize Substrate Noise Coupling in RF LNAs\",\"authors\":\"A. Sundaresan, T. Fiez, K. Mayaram\",\"doi\":\"10.1109/CICC.2006.320926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of the sizing of ground taps on the noise injected into a 1.5GHz low noise amplifier (LNA), by a stepped buffer, for a heavily doped CMOS process is quantitatively examined. Precise modeling provides good agreement between measurements and simulations. A 10dB increase in isolation was achieved by scaling the area of the substrate contact by a factor of 400, and by increasing the proximity of the contacts to the sensitive transistors\",\"PeriodicalId\":269854,\"journal\":{\"name\":\"IEEE Custom Integrated Circuits Conference 2006\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Custom Integrated Circuits Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2006.320926\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320926","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

定量研究了一种重掺杂CMOS工艺中，地抽头尺寸对阶梯形缓冲器注入1.5GHz低噪声放大器(LNA)噪声的影响。精确的建模提供了测量和模拟之间的良好一致性。通过将衬底触点的面积按400倍缩放，并通过增加触点与敏感晶体管的接近度，实现了10dB隔离度的增加

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Sizing Ground Taps to Minimize Substrate Noise Coupling in RF LNAs

The influence of the sizing of ground taps on the noise injected into a 1.5GHz low noise amplifier (LNA), by a stepped buffer, for a heavily doped CMOS process is quantitatively examined. Precise modeling provides good agreement between measurements and simulations. A 10dB increase in isolation was achieved by scaling the area of the substrate contact by a factor of 400, and by increasing the proximity of the contacts to the sensitive transistors

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IEEE Custom Integrated Circuits Conference 2006

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