n型硅压电阻预应变状态对其压电阻的影响

2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE) Pub Date : 2014-10-01 DOI:10.1109/APEIE.2014.7040925

V. Gridchin, A. S. Cherkaev, E. G. Sayanova

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引用次数: 2

摘要

提出了沿[100]晶轴单轴预应变状态下n型硅的纵向和横向压阻系数理论。在1·1016 - 1·1020 cm-3范围内进行了各种杂质浓度的数值计算。结果表明，压敏电阻的压缩预应变状态可使纵向压阻系数提高60%以上。

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The influence of n-type silicon piezoresistors pre-strain state on their piezoresistance

Theory of n-type silicon longitudinal and transverse piezoresistance coefficients in the case of uniaxial pre-strain state along [100] crystallographic axis is presented. Numerical calculations for various impurity concentrations in a range of 1·10¹⁶ - 1·10²⁰ cm^-3 are performed. It has been shown that compressive pre-strain state of the piezoresistor can increase the longitudinal piezoresistance coefficient on 60 %.

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2014 12th International Conference on Actual Problems of Electronics Instrument Engineering (APEIE)

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