{"title":"用于无线应用的无源MESFET限制器","authors":"C.E. Buchinsky, A. Katz","doi":"10.1109/SARNOF.1995.636702","DOIUrl":null,"url":null,"abstract":"The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.","PeriodicalId":118150,"journal":{"name":"IEEE Princeton Section Sarnoff Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Passive MESFET Limiters For Wireless Applications\",\"authors\":\"C.E. Buchinsky, A. Katz\",\"doi\":\"10.1109/SARNOF.1995.636702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.\",\"PeriodicalId\":118150,\"journal\":{\"name\":\"IEEE Princeton Section Sarnoff Symposium\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-04-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Princeton Section Sarnoff Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SARNOF.1995.636702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Princeton Section Sarnoff Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SARNOF.1995.636702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The ability to sharply limit power level while maintaining a negligible change in phase is important in many wireless communications systems. This paper investigates the use of a passive MESFET device as a power limiter for the UHF and lower microwave frequency range. The S-parameters of a commercial grade GaAs FET were measured as a function of power level and used to develop a model. From the model a limiter circuit was designed, fabricated and tested. The resulting limiter employed two FETs in cascade, and produced a near ideal transfer characteristic over more than a two decade power range with less than a 15 degree change in phase.
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