高性能HBT线性功率放大器的制造技术

L.W. Yang, J. Komiak, D.P. Smith, M. Kao, R. S. Brozovich, K. Nordheden, D. Helms, D. Houston, F. Bardsley
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引用次数: 6

摘要

一种基于发射极到基基重新排列方法和单步厚发射极金属化技术的简单HBT MMIC工艺技术已经生产出了线性效率高的HBT MMIC和产量高的功率MMIC。功率晶体管电池在6ghz下以0.17 W实现了72%的PAE。MMIC的双音饱和功率在10 GHz时达到36.4%的PAE。从2db增益压缩到5db时,IMD为30dbc。
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Manufacturing technology for high performance HBT linear power amplifiers
A straightforward HBT MMIC process technology based on an emitter-to-base realigned approach and single-step thick emitter metallization technique has produced highly linear efficient HBTs and power MMICs with high yields. The power transistor cell achieved 72% PAE with 0.17 W at 6 GHz. The two tone saturated power of the MMIC achieved 36.4% PAE at 10 GHz. The IMD is 30 dBc at 5 dB back-off from 2 dB gain compression.
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