用有源双端口模型模拟辐射抗扰度测量

S. Buntz, H. Leier, Stefan Fuchs, Dieter Gwisdalla, W. Menzel
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引用次数: 1

摘要

本文提出了一种用主动双端口模型模拟辐射抗扰度试验的新方法。该方法的目的是通过分离干扰产生和被测设备(DUT)来简化不同测试配置的分析。通过这种方法,可以确定不同dut在辐射抗扰度测量中受扰导线末端产生的实际干扰水平。为了产生这种主动双端口模型,进行了场线耦合的MoM模拟,特别强调了模拟典型的对数周期偶极子阵列天线结构(LPDA)而不是平面入射波。为了验证仿真结果,对相应装置进行了s参数测量。仿真和测量均可用于生成抗扰度试验装置的主动s参数模型。然后应用该模型来确定所产生的扰动-在辐照线的末端对任意负载的正向功率。这最终允许将辐射抗扰度测试与其他抗扰度测试进行比较,例如直接功率注入(DPI)抗扰度测量。
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Modeling of radiated immunity measurements by an active two-port model
In this paper a new approach of modeling radiated immunity tests by an active two-port model is shown. The goal of this approach is to simplify analysis of different test configurations by separating disturbance generation and device under test (DUT). With this approach information about the real level of disturbance generated at the end of the perturbed wire in a radiated immunity measurement can be determined for different DUTs. To generate this active two-port model, MoM simulations of field to wire coupling are done, with special emphasis on modeling a typical log-periodic dipole array antenna structure (LPDA) instead of a planar incident wave. To verify the simulations, s-parameter measurements of an according setup are done. Both, simulations and measurements can be used to generate an active s-parameter model of the immunity test setup. The model is then applied to determine the generated disturbance - in terms of forward power into any arbitrary load at the end of the irradiated wire. This finally allows comparing the radiated immunity test to other immunity tests, e.g. Direct Power Injection (DPI) immunity measurements.
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