A Study on the Wide Frequency Range Electrical Variables in the Al/Coumarin–PVA/p-Si Diodes at Room Temperature

Coumarin-PVA is deposited onto p-Si wafers using the spin coating technique. I examined the fundamental electrical variables of the Al/CoumarinPVA/p-Si type Schottky barrier diodes (SBDs), by utilizing capacitance/voltage(C-V) and conductance/voltage (G-V) measurements at different frequencies varied from 10kHz to1MHz. I have thoroughly explored how the CoumarinPVA interlayer, series resistance (Rs) and surface states (Nss) affect the electrical properties of SBDs. In order to remove Rs's influence on the observed C and G values, I corrected them. The observed high values of C/G measured at low frequencies result from the existence of interfacial states. There is evidence that while NA decreases exponentially with increasing frequency, B increases exponentially. A particular distribution of Nss density, polarization processes, and the existence of an interfacial layer can all contribute to explaining these characteristic features of them. According to experimental findings, I conclude that the interfacial polymer CoumarinPVA layer as well as the Nss and Rs also have a significant impact on the C/G-V quantities of SBDs.