{"title":"低相位噪声58 GHz SiGe HBT推推振荡器，同时输出29 GHz","authors":"F. Sinnesbichler, B. Hautz, G. Olbrich","doi":"10.1109/MWSYM.2000.860879","DOIUrl":null,"url":null,"abstract":"We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.","PeriodicalId":149404,"journal":{"name":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Low phase noise 58 GHz SiGe HBT push-push oscillator with simultaneous 29 GHz output\",\"authors\":\"F. Sinnesbichler, B. Hautz, G. Olbrich\",\"doi\":\"10.1109/MWSYM.2000.860879\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.\",\"PeriodicalId\":149404,\"journal\":{\"name\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2000.860879\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2000.860879","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We present hybrid SiGe HBT push-push oscillators at 58 GHz, fabricated on 5 mil alumina substrates. A second output additionally allows us to make use of the fundamental 29 GHz signal. A maximum output power of +1 dBm at 58 GHz and simultaneously of 0 dBm at 29 GHz were achieved. Phase noise at 58 GHz was measured to be -108 dBc/Hz at an offset frequency of 1 MHz.
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