退化对毫米波LNA的影响:微带传输线的应用

M. Fanoro, S. S. Olokede, S. Sinha
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引用次数: 1

摘要

本文研究了采用0.13 μm SiGe BiCMOS技术设计的60 GHz毫米波低噪声放大器(LNA)的单线退化微带传输线(MTL)对增益和噪声系数的影响。为了实现这一目标,所设计的LNA的性能在LNA的第一级设置中使用公共发射极晶体管拓扑,在有无单线退化MTL的情况下发生变化。初步结果表明,在原理图中引入单线退化MTL导致LNA的增益降低和噪声系数增加,而在没有单线退化MTL的情况下,级联码结构的共发射极晶体管使LNA获得了令人满意的增益增加和噪声系数降低。在LNA电路中加入MTL时,最大增益为15.91 dB,最小噪声系数为6.74 dB;断开单线MTL时,最大增益为20.84 dB,最小噪声系数为6.16 dB。
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Effect of Degeneration on a Millimeter Wave LNA: Application of Microstrip Transmission Lines
This paper presents the impact of a singlewire degeneration microstrip transmission line (MTL) on the gain and noise figure of a millimeter wave low noise amplifier (LNA) at 60 GHz, designed using 0.13 μm SiGe BiCMOS technology. To accomplish this, the performance of the designed LNA is varied with and without the presence of singlewire degeneration MTL in a setup at the first stage of the LNA, using a common emitter transistor topology. Initial results show that the introduction of the singlewire degeneration MTL in the schematic resulted in a decrease in the gain and an increased noise figure of the LNA, while without the presence of a singlewire MTL, the common emitter transistor of the cascode configuration gave rise to a satisfactory increase in gain and reduced noise figure for the LNA. A maximum gain of 15.91 dB and a minimum noise figure of 6.74 dB were recorded when MTL was added to the LNA circuit, while a maximum gain of 20.84 dB and a minimum noise figure of 6.16 dB was recorded when the singlewire MTL was disconnected.
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