低能重离子束扰动敏感体厚度和临界能的估计

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.699008

R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifshitz, M. Hass, C. Inguimbert, C. Detcheverry

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引用次数: 6

摘要

低能、低量程离子被用于创造各种条件，使能量沉积在导致SEU效应的结构中。使用该方法发现一组亚微米sram和dram的敏感体积厚度范围为1至20 /spl mu/m。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams

Low energy, low range ions are used for creating various conditions for energy deposition in structures responsible for SEU effects. Sensitive volume thicknesses found using this method for a set of sub-micronic SRAMs and DRAMs range from 1 to 20 /spl mu/m.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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