{"title":"SOI技术中一种新型rc触发双向ESD保护电路","authors":"Yan Wang, Zhiwei Liu, Jizhi Liu","doi":"10.1109/ISNE.2019.8896534","DOIUrl":null,"url":null,"abstract":"In this paper, a novel RC-triggered bidirectional ESD protection circuit in SOI technology is proposed and demonstrated. In the proposed circuit, the improved bridge rectifier circuit is formed by diode rectifier circuit paralleling MOSFET rectifier circuit. The circuit can convert the input voltage in I/O pin ranging between negative and positive values into a single polarity input voltage to the RC-triggered circuit. From the simulation results, the novel circuit can provide efficient bidirectional ESD protection for the I/O pin.","PeriodicalId":405565,"journal":{"name":"2019 8th International Symposium on Next Generation Electronics (ISNE)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel RC-Triggered Bidirectional ESD Protection Circuit in SOI Technology\",\"authors\":\"Yan Wang, Zhiwei Liu, Jizhi Liu\",\"doi\":\"10.1109/ISNE.2019.8896534\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a novel RC-triggered bidirectional ESD protection circuit in SOI technology is proposed and demonstrated. In the proposed circuit, the improved bridge rectifier circuit is formed by diode rectifier circuit paralleling MOSFET rectifier circuit. The circuit can convert the input voltage in I/O pin ranging between negative and positive values into a single polarity input voltage to the RC-triggered circuit. From the simulation results, the novel circuit can provide efficient bidirectional ESD protection for the I/O pin.\",\"PeriodicalId\":405565,\"journal\":{\"name\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 8th International Symposium on Next Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2019.8896534\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 8th International Symposium on Next Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2019.8896534","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel RC-Triggered Bidirectional ESD Protection Circuit in SOI Technology
In this paper, a novel RC-triggered bidirectional ESD protection circuit in SOI technology is proposed and demonstrated. In the proposed circuit, the improved bridge rectifier circuit is formed by diode rectifier circuit paralleling MOSFET rectifier circuit. The circuit can convert the input voltage in I/O pin ranging between negative and positive values into a single polarity input voltage to the RC-triggered circuit. From the simulation results, the novel circuit can provide efficient bidirectional ESD protection for the I/O pin.
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