{"title":"一种双向电流模CMOS多值逻辑存储电路","authors":"K. Current, M. E. Hurlston","doi":"10.1109/ISMVL.1991.130729","DOIUrl":null,"url":null,"abstract":"A bidirectional current-mode multiple-valued logic (MVL) latch circuit realized in a standard 2- mu m polysilicon gate CMOS process is presented. The circuit accepts and quantizes a bidirectional input current during the setup clock phase and latches the quantized input during the hold clock phase. Characteristics of fully integrated prototypes realized on a CMOS test chip are presented. Using logical current increments of only 10 mu A, the bidirectional current-mode MVL latch's setup and hold time has been determined to total approximately 44 ns. The input/output propagation delay for transitions between adjacent states has been determined to be approximately 50 ns at these low current levels.<<ETX>>","PeriodicalId":127974,"journal":{"name":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A bi-directional current-mode CMOS multiple valued logic memory circuit\",\"authors\":\"K. Current, M. E. Hurlston\",\"doi\":\"10.1109/ISMVL.1991.130729\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bidirectional current-mode multiple-valued logic (MVL) latch circuit realized in a standard 2- mu m polysilicon gate CMOS process is presented. The circuit accepts and quantizes a bidirectional input current during the setup clock phase and latches the quantized input during the hold clock phase. Characteristics of fully integrated prototypes realized on a CMOS test chip are presented. Using logical current increments of only 10 mu A, the bidirectional current-mode MVL latch's setup and hold time has been determined to total approximately 44 ns. The input/output propagation delay for transitions between adjacent states has been determined to be approximately 50 ns at these low current levels.<<ETX>>\",\"PeriodicalId\":127974,\"journal\":{\"name\":\"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISMVL.1991.130729\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the Twenty-First International Symposium on Multiple-Valued Logic","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISMVL.1991.130729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A bi-directional current-mode CMOS multiple valued logic memory circuit
A bidirectional current-mode multiple-valued logic (MVL) latch circuit realized in a standard 2- mu m polysilicon gate CMOS process is presented. The circuit accepts and quantizes a bidirectional input current during the setup clock phase and latches the quantized input during the hold clock phase. Characteristics of fully integrated prototypes realized on a CMOS test chip are presented. Using logical current increments of only 10 mu A, the bidirectional current-mode MVL latch's setup and hold time has been determined to total approximately 44 ns. The input/output propagation delay for transitions between adjacent states has been determined to be approximately 50 ns at these low current levels.<>