紫外雪崩光电二极管的CMOS技术

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904417

A. Pauchard, A. Rochas, Z. Randjelovic, P. Besse, R. Popovic

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引用次数: 30

摘要

我们提出了一种简单的方法，允许在标准CMOS技术中制造紫外选择性雪崩光电二极管。通过0.6 /spl mu/m的间隙将两个n/子井/区域横向扩散，形成了一个有效的保护环结构。我们的光电二极管实现了非常低的暗电流，仅为400 pA/mm/sup 2/，平均增益=20 at /spl λ /=400 nm时的多余噪声F=7，以及良好的增益均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultraviolet avalanche photodiode in CMOS technology

We present a simple method that allows the fabrication of ultraviolet-selective avalanche photodiodes in a standard CMOS technology. An efficient guard ring structure is created using the lateral diffusion of two n/sub well/ regions separated by a gap of 0.6 /spl mu/m. Our photodiodes achieve a very low dark current of only 400 pA/mm/sup 2/, an excess noise F=7 for a mean gain =20 at /spl lambda/=400 nm, and a good gain uniformity.

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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