一种检测温度变化的新方法

Ararat Khachatryan, D. Mirzoyan
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引用次数: 0

摘要

由于工作负载和环境条件的变化,现代VLSI设计经历了显着的温度变化。温度的变化会导致其他性能参数的变化,如功率和可靠性。现代芯片使用复杂的自校准技术来调整设计参数,以保护芯片的运行免受温度波动的影响。任何片上自校准系统都需要温度变化检测来观察芯片在感兴趣点的温度。本文介绍了一种基于亚微米CMOS技术的大范围温度变化的片上温度变化检测方法。
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A novel approach to detect temperature variation
Modern VLSI designs experience significant temperature change due to variations in workload and ambient conditions. The change in temperature can cause variation in other performance parameters such as power and reliability. Modern chips use complex self-calibration techniques to adjust design parameters to safeguard the chip's operation against temperature fluctuations. Any on-chip self-calibration system needs a temperature variation detecting to observe the temperature of the chip at the spot of interest. This paper describes a novel approach of on chip temperature variation detecting in submicron CMOS technology for a wide range of temperature variation.
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