{"title":"高效、宽带的ku波段GaAs MMIC高功率放大器","authors":"I. Ju, Hong-gu Ji, I. Yom","doi":"10.1109/COMITE.2015.7120324","DOIUrl":null,"url":null,"abstract":"In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.","PeriodicalId":250220,"journal":{"name":"2015 Conference on Microwave Techniques (COMITE)","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Ku-band GaAs MMIC high power amplifier with high efficiency and broadband\",\"authors\":\"I. Ju, Hong-gu Ji, I. Yom\",\"doi\":\"10.1109/COMITE.2015.7120324\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.\",\"PeriodicalId\":250220,\"journal\":{\"name\":\"2015 Conference on Microwave Techniques (COMITE)\",\"volume\":\"9 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 Conference on Microwave Techniques (COMITE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMITE.2015.7120324\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Conference on Microwave Techniques (COMITE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMITE.2015.7120324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ku-band GaAs MMIC high power amplifier with high efficiency and broadband
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.
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