用于先进MOSFET器件的新型硅外延

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Pub Date : 2000-12-10 DOI:10.1109/IEDM.2000.904285

G. Neudeck, T. Su, J. Denton

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引用次数: 23

摘要

硅选择性外延生长(SEG)和外延横向过度生长提供了一种制造薄SOI器件岛、完全自排列双栅SOI mosfet和多层SOI器件的技术。在SOI岛的2个SOI层和双栅全耗尽器件中，亚微米p - mosfet显示出低的关闭电流<0.2 pA//spl mu/m，亚阈值斜率<70 mV/dec)。

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Novel silicon epitaxy for advanced MOSFET devices

Silicon selective epitaxial growth (SEG) and epitaxial lateral overgrowth provide a technology for fabricating thin SOI device islands, fully self-aligned double gate SOI MOSFETs and multiple layers of SOI devices. Sub-micron P-MOSFETs in 2 SOI layers of SOI islands and the double-gate fully-depleted devices show low off currents <0.2 pA//spl mu/m with low values of sub-threshold slopes (<70 mV/dec).

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International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)

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