Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang
{"title":"重复弯曲应力作用下柔性LTPS tft的退化","authors":"Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang","doi":"10.1109/CAD-TFT.2018.8608098","DOIUrl":null,"url":null,"abstract":"The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and \"hump\" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.","PeriodicalId":146962,"journal":{"name":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Degradation of flexible LTPS TFTs under repetitive bending stress\",\"authors\":\"Wei Jiang, Qi Shan, Huaisheng Wang, Dongli Zhang, Mingxiang Wang\",\"doi\":\"10.1109/CAD-TFT.2018.8608098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and \\\"hump\\\" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.\",\"PeriodicalId\":146962,\"journal\":{\"name\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAD-TFT.2018.8608098\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAD-TFT.2018.8608098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Degradation of flexible LTPS TFTs under repetitive bending stress
The effect of dynamic bending stress on the degradation of p-type flexible low-temperature poly-Si TFTs is investigated. Repeated bending stress causes TFT characteristic degradation, such as on-state current increase, positive threshold voltage shift, and "hump" appearance. Finite element analysis is used to analyze the strain distribution within TFT structure. Degradation approximately follows a linear trend with the number of bending cycles, and with the strain caused by the bending stress.
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