高压大电流IGBT模块中多芯片导通一致性分析

Erxian Yao, Rui Wang, Xuguang Liu, Zhengwei Pan, Yan Tong
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引用次数: 0

摘要

本文以3300V-1500A IGBT模块为例,分析了模块内部结构、与基板间隙、芯片布局对多芯片导通一致性的影响。驱动PCB的铜箔面积应尽量扩大,栅极铜箔与发射极铜箔应尽量重叠,以抵消功率侧电流变化对驱动信号的影响。在芯片布局上,应尽量减小栅极路径和发射极路径长度的差异,以提高不同芯片驱动信号的一致性。驱动PCB与背板之间的间隙应尽量增大,以减少电源侧电流变化对驱动侧的影响。
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Analysis of Multi Chips Turn on Consistency in High Voltage and High Current IGBT Module
In this paper, the influence of module internal structure, gap between and substrate, chip layout on multi chips turn on consistency are analyzed, taking the 3300V-1500A IGBT module as example. the copper foil area of the drive PCB should be expanded as much as possible, and the gate copper foil and the emitter copper foil should overlap as much as possible to offset the influence of the power side current change on the drive signal. On the chip layout, the difference between the gate path and the emitter path length should be minimized to improve the consistency of the driving signals of different chips. The gap between the drive PCB and the backing plate should be increased as much as possible to reduce the impact of the power side current change on the drive side.
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