{"title":"基于130纳米BiCMOS技术的数字可调60 ghz集成六端口接收器前端","authors":"M. Voelkel, R. Weigel, A. Hagelauer","doi":"10.1109/SIRF.2019.8709117","DOIUrl":null,"url":null,"abstract":"In this paper, a fully integrated digital adjustable sixport receiver front-end working at 60GHz is presented. The circuit features two variable gain amplifier, the passive sixport network, four detectors and a SPI-interface. Application area are industrial radar or angle of arrival detection. The phase measurement is done by superposition and power detection of two millimeter wave signals. The integrated circuit has a power consumption of 88.44mW from a 3.3V supply voltage. It is fabricated in a $0.13 \\mu m$ SiGe BiCMOS process and has a size of $1560 \\mu \\times 1000 \\mu m$. The RF and reference input power can be adjusted in a 21dB range over a 12bit digital interface. The receiver exhibits a 1dB compression point of -21.9dB. RF signals down to -55dBm are detectable.","PeriodicalId":356507,"journal":{"name":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Digital Adjustable 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology\",\"authors\":\"M. Voelkel, R. Weigel, A. Hagelauer\",\"doi\":\"10.1109/SIRF.2019.8709117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a fully integrated digital adjustable sixport receiver front-end working at 60GHz is presented. The circuit features two variable gain amplifier, the passive sixport network, four detectors and a SPI-interface. Application area are industrial radar or angle of arrival detection. The phase measurement is done by superposition and power detection of two millimeter wave signals. The integrated circuit has a power consumption of 88.44mW from a 3.3V supply voltage. It is fabricated in a $0.13 \\\\mu m$ SiGe BiCMOS process and has a size of $1560 \\\\mu \\\\times 1000 \\\\mu m$. The RF and reference input power can be adjusted in a 21dB range over a 12bit digital interface. The receiver exhibits a 1dB compression point of -21.9dB. RF signals down to -55dBm are detectable.\",\"PeriodicalId\":356507,\"journal\":{\"name\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2019.8709117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2019.8709117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Digital Adjustable 60-GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology
In this paper, a fully integrated digital adjustable sixport receiver front-end working at 60GHz is presented. The circuit features two variable gain amplifier, the passive sixport network, four detectors and a SPI-interface. Application area are industrial radar or angle of arrival detection. The phase measurement is done by superposition and power detection of two millimeter wave signals. The integrated circuit has a power consumption of 88.44mW from a 3.3V supply voltage. It is fabricated in a $0.13 \mu m$ SiGe BiCMOS process and has a size of $1560 \mu \times 1000 \mu m$. The RF and reference input power can be adjusted in a 21dB range over a 12bit digital interface. The receiver exhibits a 1dB compression point of -21.9dB. RF signals down to -55dBm are detectable.