{"title":"改进PSRR的曲率补偿带隙基准","authors":"Xiao Du, Wei-min Li, Xiao-fei Zhu, Xiao-dong Fu","doi":"10.1109/ICASIC.2005.1611387","DOIUrl":null,"url":null,"abstract":"A curvature-compensated current mode bandgap reference with improved PSRR is presented. The circuit takes advantage of a simplified straightforward implementation of the curvature compensation method, the reference achieves a temperature coefficient of 7ppm/ degC over the temperature range of -20degC to +80 degC. And by using negative feedback to generate a regulated supply, the power supply rejection ration (PSRR) of the proposed circuit can be increased up to 90dB at 10kHz.The circuit is designed using 0.8 mum BiCMOS technology and silicon area is 1.07 times 0.92 mm2","PeriodicalId":431034,"journal":{"name":"2005 6th International Conference on ASIC","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A curvature-compensated bandgap reference with improved PSRR\",\"authors\":\"Xiao Du, Wei-min Li, Xiao-fei Zhu, Xiao-dong Fu\",\"doi\":\"10.1109/ICASIC.2005.1611387\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A curvature-compensated current mode bandgap reference with improved PSRR is presented. The circuit takes advantage of a simplified straightforward implementation of the curvature compensation method, the reference achieves a temperature coefficient of 7ppm/ degC over the temperature range of -20degC to +80 degC. And by using negative feedback to generate a regulated supply, the power supply rejection ration (PSRR) of the proposed circuit can be increased up to 90dB at 10kHz.The circuit is designed using 0.8 mum BiCMOS technology and silicon area is 1.07 times 0.92 mm2\",\"PeriodicalId\":431034,\"journal\":{\"name\":\"2005 6th International Conference on ASIC\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 6th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASIC.2005.1611387\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 6th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2005.1611387","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
提出了一种改进PSRR的曲率补偿型电流模带隙基准电路。该电路利用曲率补偿方法的简化直接实现，基准温度系数在-20℃至+80℃的温度范围内达到7ppm/℃。通过使用负反馈产生稳压电源，该电路的电源抑制比(PSRR)在10kHz时可提高到90dB。电路采用0.8 μ m BiCMOS技术设计，硅面积为1.07 × 0.92 mm2
A curvature-compensated bandgap reference with improved PSRR
A curvature-compensated current mode bandgap reference with improved PSRR is presented. The circuit takes advantage of a simplified straightforward implementation of the curvature compensation method, the reference achieves a temperature coefficient of 7ppm/ degC over the temperature range of -20degC to +80 degC. And by using negative feedback to generate a regulated supply, the power supply rejection ration (PSRR) of the proposed circuit can be increased up to 90dB at 10kHz.The circuit is designed using 0.8 mum BiCMOS technology and silicon area is 1.07 times 0.92 mm2
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