硅纳米电子学用肖特基势垒mosfet

1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings Pub Date : 1997-01-06 DOI:10.1109/WOFE.1997.621159

J. Tucker

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引用次数: 26

摘要

金属硅化源极/漏极mosfet可以提供一种简单的途径来实现具有/spl sim/ 25nm栅极长度和/spl sim/ 100nm总器件尺寸的太比特集成电路。这里概述了这种方法的潜在优点以及最近的进展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Schottky barrier MOSFETs for silicon nanoelectronics

Metal silicide source/drain MOSFETs may provide a simple route to terabit integrated circuits with /spl sim/25 nm gate length and /spl sim/100 nm overall device size. Potential advantages of this approach are outlined here along with recent progress.

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1997 Advanced Workshop on Frontiers in Electronics, WOFE '97 Proceedings

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