用于双频CDMA/AMPS无线手机的基带到射频BiCMOS发射机RFIC

2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096) Pub Date : 2000-06-10 DOI:10.1109/RFIC.2000.854432

K. Sahota, K. Gard, B. Walker, S. Szabo, Wenjun Su, E. Zeisel

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引用次数: 5

摘要

提出了一种用于双频CDMA/AMPS无线手机的单片基带到射频BiCMOS发射机RFIC (RFT3100)。该RFIC包含基带I/Q调制器、UHF VCO缓冲器、中频锁相环、VCO、中频和RF VGAs、图像抑制RF上转换器、用于蜂窝和pc频段的双驱动放大器，以及用于控制芯片的三线串行接口。该芯片的工作电压为2.7至3.3 V，温度范围为-30至85/spl℃，封装在32引线5/spl倍/5毫米凸点芯片载体(BCC)封装中。该芯片采用18 GHz(模拟NPN英尺)，0.5 um BiCMOS工艺制造。

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A base-band to RF BiCMOS transmitter RFIC for dual-band CDMA/AMPS wireless handsets

A single chip, base-band to RF, BiCMOS transmitter RFIC (RFT3100) for dual-band CDMA/AMPS wireless handsets is presented. The RFIC contains base-band I/Q modulator, UHF VCO buffer, IF PLL, VCO, IF and RF VGAs, image rejection RF upconverter, dual driver amplifiers for cellular and PCS bands, and a three wire serial interface to control the chip. The chip operates from a 2.7 to 3.3 V supply, a temperature range of -30 to 85/spl deg/C, and is packaged in a 32 lead 5/spl times/5 mm bump chip carrier (BCC) package. The chip is fabricated using a 18 GHz (analog NPN ft), 0.5 um BiCMOS process.

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2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Digest of Papers (Cat. No.00CH37096)

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