1.3 /spl mu/m-GaInAsP/InP量子阱半导体激光器振荡波长的温度敏感性

T. Higashi, T. Yamamoto, S. Ogita
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引用次数: 6

摘要

要求接入网的光源特性不受环境温度变化的影响。在较长距离(> 10km)和高比特率(>100Mb/s)的传输系统中,光纤色散的影响是不可忽视的。因此,振荡波长对温度变化的稳定性也有要求。本文通过实验研究了1.3 /spl mu/m GaInAsP-InP量子w半导体激光器振荡波长的温度敏感性。
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Temperature sensitivity of oscillation wavelength in 1.3 /spl mu/m-GaInAsP/InP quantum-well semiconductor lasers
Characteristics of optical sources for access networks are required to be insensitive to the environment temperature change. In a relatively long-haul (> 10 km) and high bit-rate (>100Mb/s) transmission system, the effect of dispersion of optical fiber could not be negligible. Therefore, the stability of the oscillation wavelength to the temperature change could also be required. In this paper, we experimentally examined the temperature sensitivity of the oscillation wavelength in 1.3 /spl mu/m GaInAsP-InP QW semiconductor lasers.
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