0.14 THz纳秒脉冲辐射下约瑟夫森结响应的数值研究

Guang-qiang Wang, Jianguo Wang, Xue-feng Wang, Chang-jiang Tong, Xiaoze Li
{"title":"0.14 THz纳秒脉冲辐射下约瑟夫森结响应的数值研究","authors":"Guang-qiang Wang, Jianguo Wang, Xue-feng Wang, Chang-jiang Tong, Xiaoze Li","doi":"10.1117/12.900120","DOIUrl":null,"url":null,"abstract":"Interaction between the high temperature (high-Tc) Josephson junctions and 0.14 THz nanosecond pulse has been numerically investigated in this paper. A general equivalent circuit based on resistively-shunted junction (RSJ) model was applied to simulate a typical high-Tc Josephson junction under the radiation of 0.14 THz narrow-band pulse with pulse duration of 2 ns. The varying ratio of phase difference of electron wave functions between the two sides of the junction, the current-voltage characteristics, and the voltage responses were determined at several specific times during the interaction. The Shapiro steps were clearly observed but distorted, and then the irradiation frequency was derived, coinciding with the simulated frequency. Also discussed were the effects of some parameters, including the pulse power, the normal resistance and the critical current of junction, on the current-voltage characteristics and the voltage responses. All the results showed that the high-Tc Josephson junctions probably could be used for the direct frequency measurements of narrow-band terahertz pulses under some specific conditions.","PeriodicalId":355017,"journal":{"name":"Photoelectronic Detection and Imaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Numerical research on the response of Josephson junction with 0.14 THz nanosecond pulse radiation\",\"authors\":\"Guang-qiang Wang, Jianguo Wang, Xue-feng Wang, Chang-jiang Tong, Xiaoze Li\",\"doi\":\"10.1117/12.900120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interaction between the high temperature (high-Tc) Josephson junctions and 0.14 THz nanosecond pulse has been numerically investigated in this paper. A general equivalent circuit based on resistively-shunted junction (RSJ) model was applied to simulate a typical high-Tc Josephson junction under the radiation of 0.14 THz narrow-band pulse with pulse duration of 2 ns. The varying ratio of phase difference of electron wave functions between the two sides of the junction, the current-voltage characteristics, and the voltage responses were determined at several specific times during the interaction. The Shapiro steps were clearly observed but distorted, and then the irradiation frequency was derived, coinciding with the simulated frequency. Also discussed were the effects of some parameters, including the pulse power, the normal resistance and the critical current of junction, on the current-voltage characteristics and the voltage responses. All the results showed that the high-Tc Josephson junctions probably could be used for the direct frequency measurements of narrow-band terahertz pulses under some specific conditions.\",\"PeriodicalId\":355017,\"journal\":{\"name\":\"Photoelectronic Detection and Imaging\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-08-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Photoelectronic Detection and Imaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.900120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Photoelectronic Detection and Imaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.900120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文对高温(高tc)约瑟夫森结与0.14太赫兹纳秒脉冲的相互作用进行了数值研究。采用基于电阻分流结(RSJ)模型的通用等效电路,模拟了0.14 THz脉冲持续时间为2ns的窄带脉冲辐射下典型的高tc约瑟夫森结。测定了相互作用过程中若干特定时刻电子波函数在结两侧的相位差变化率、电流-电压特性和电压响应。观测到的夏皮罗阶跃明显,但存在畸变,由此推导出辐照频率,与模拟频率吻合。讨论了脉冲功率、正常电阻和结临界电流等参数对电流-电压特性和电压响应的影响。结果表明,在一定条件下,高tc约瑟夫森结可用于窄带太赫兹脉冲的直接频率测量。
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Numerical research on the response of Josephson junction with 0.14 THz nanosecond pulse radiation
Interaction between the high temperature (high-Tc) Josephson junctions and 0.14 THz nanosecond pulse has been numerically investigated in this paper. A general equivalent circuit based on resistively-shunted junction (RSJ) model was applied to simulate a typical high-Tc Josephson junction under the radiation of 0.14 THz narrow-band pulse with pulse duration of 2 ns. The varying ratio of phase difference of electron wave functions between the two sides of the junction, the current-voltage characteristics, and the voltage responses were determined at several specific times during the interaction. The Shapiro steps were clearly observed but distorted, and then the irradiation frequency was derived, coinciding with the simulated frequency. Also discussed were the effects of some parameters, including the pulse power, the normal resistance and the critical current of junction, on the current-voltage characteristics and the voltage responses. All the results showed that the high-Tc Josephson junctions probably could be used for the direct frequency measurements of narrow-band terahertz pulses under some specific conditions.
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