{"title":"一种利用反并联可重构晶体管(ART)对的新型放大器线性化技术","authors":"T. Yum, Q. Xue, C. Chan","doi":"10.1109/MWSYM.2004.1336081","DOIUrl":null,"url":null,"abstract":"A new amplifier linearization methodology using an anti-parallel reconfigurable transistor (ART) pair is proposed. Unlike conventional linearization methods in which only one technique is employed, our ART method utilizes all terminals of an additional transistor and provides a unified pre-, post- and cubic-polynomial distortion technique for performance enhancement. Experimental results reveal a 42 dB reduction for the third-order intermodulation distortion (IMD3) and 15 dB for the fifth-order (IMD5) at 2.1 GHz operation band. The input 1-dB gain compression point and phase distortion have been improved effectively up to 8 dB and 15/spl deg/, respectively, under a 5-V operation voltage. Meanwhile, the proposed approach demonstrates a peak power added efficiency (PAE) of 61% with 16 dB transducer gain and 21 dBm output power for a single stage low-power SiGe BJT transistor. The adjacent channel power ratio (ACPR) is maintained over -45 and -60 dBc for a W-CDMA and PHS modulated signal, respectively, under a wide range of output power.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A novel amplifier linearization technique using an anti-parallel reconfigurable transistor (ART) pair\",\"authors\":\"T. Yum, Q. Xue, C. Chan\",\"doi\":\"10.1109/MWSYM.2004.1336081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new amplifier linearization methodology using an anti-parallel reconfigurable transistor (ART) pair is proposed. Unlike conventional linearization methods in which only one technique is employed, our ART method utilizes all terminals of an additional transistor and provides a unified pre-, post- and cubic-polynomial distortion technique for performance enhancement. Experimental results reveal a 42 dB reduction for the third-order intermodulation distortion (IMD3) and 15 dB for the fifth-order (IMD5) at 2.1 GHz operation band. The input 1-dB gain compression point and phase distortion have been improved effectively up to 8 dB and 15/spl deg/, respectively, under a 5-V operation voltage. Meanwhile, the proposed approach demonstrates a peak power added efficiency (PAE) of 61% with 16 dB transducer gain and 21 dBm output power for a single stage low-power SiGe BJT transistor. The adjacent channel power ratio (ACPR) is maintained over -45 and -60 dBc for a W-CDMA and PHS modulated signal, respectively, under a wide range of output power.\",\"PeriodicalId\":334675,\"journal\":{\"name\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2004.1336081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1336081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A novel amplifier linearization technique using an anti-parallel reconfigurable transistor (ART) pair
A new amplifier linearization methodology using an anti-parallel reconfigurable transistor (ART) pair is proposed. Unlike conventional linearization methods in which only one technique is employed, our ART method utilizes all terminals of an additional transistor and provides a unified pre-, post- and cubic-polynomial distortion technique for performance enhancement. Experimental results reveal a 42 dB reduction for the third-order intermodulation distortion (IMD3) and 15 dB for the fifth-order (IMD5) at 2.1 GHz operation band. The input 1-dB gain compression point and phase distortion have been improved effectively up to 8 dB and 15/spl deg/, respectively, under a 5-V operation voltage. Meanwhile, the proposed approach demonstrates a peak power added efficiency (PAE) of 61% with 16 dB transducer gain and 21 dBm output power for a single stage low-power SiGe BJT transistor. The adjacent channel power ratio (ACPR) is maintained over -45 and -60 dBc for a W-CDMA and PHS modulated signal, respectively, under a wide range of output power.