利用纳米复合材料SiO2:PHF降低单层结构有机发光二极管的导通电压

2006 IEEE International Conference on Semiconductor Electronics Pub Date : 2006-11-01 DOI:10.1109/SMELEC.2006.381025

T. Aziz, M. Salleh, M. Umar, M. Yahaya

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摘要

制备了ITO/PHF/Al结构的聚合物发光二极管，其中PHF为聚(4,4′-二苯基乙烯)。原始设备的导通电压为18.0 V。在单结构ITO/纳米复合材料/Al聚合物发光二极管中，采用由PHF和SiO2纳米颗粒组成的纳米复合材料层作为发射层，实现了器件导通电压的降低。将1.0 ml PHF与0.05 ml SiO2胶体溶液混合制备SiO2: PHF。结果表明，自旋涂层纳米复合材料使OLED的导通电压降至9.0 V。

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Reduction of Turn-On Voltage in a Single Layer Structured Organic Light-Emitting Diode using Nanocomposites SiO2:PHF

Polymer light-emitting diode with ITO/PHF/Al structure has been fabricated, where PHF is poly (4,4'-diphenylene diphenylvinylene). The original device has turn-on voltage at 18.0 V. A reduction of turn-on voltage of this device is achieved by using the nanocomposites layer consisting of PHF and SiO2 nanoparticles as an emitting layer in a single structured ITO/nanocomposite/Al polymer light emitting diode. The SiO2: PHF was prepared by mixing 1.0 ml of PHF with 0.05 ml of SiO2 colloidal solution. It was found that the spin-coated nanocomposites has reduced the OLED turn-on voltage to 9.0 V.

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2006 IEEE International Conference on Semiconductor Electronics

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