K. Ahn, Dong-Jin Keum, I. Rhyu, Hyun-seok Kim, Yu-Beum Jeon, Hwa-Yul Yoo, Joo-Young Han, J. Baek
{"title":"高性能LNA在0.35 um SiGe射频收发器一个芯片的蜂窝应用","authors":"K. Ahn, Dong-Jin Keum, I. Rhyu, Hyun-seok Kim, Yu-Beum Jeon, Hwa-Yul Yoo, Joo-Young Han, J. Baek","doi":"10.1109/APMC.2006.4429406","DOIUrl":null,"url":null,"abstract":"This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications\",\"authors\":\"K. Ahn, Dong-Jin Keum, I. Rhyu, Hyun-seok Kim, Yu-Beum Jeon, Hwa-Yul Yoo, Joo-Young Han, J. Baek\",\"doi\":\"10.1109/APMC.2006.4429406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.\",\"PeriodicalId\":137931,\"journal\":{\"name\":\"2006 Asia-Pacific Microwave Conference\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Asia-Pacific Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2006.4429406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Asia-Pacific Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2006.4429406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance LNA in 0.35 um SiGe RF transceiver one chip for cellular applications
This paper describes the design and test results of a high performance low noise amplifier (LNA) for code division multiple access (CDMA) one chip transceiver integrated circuit (IC). The circuits are implemented in a standard 0.35-um Samsung Si/Ge BiCMOS process. The LNA has 4 step forward gain control of 15.8 dB, 4 dB, -7.5 dB, and -21 dB. The measured performance of the proposed LNA at the maximum gain stage shows the noise figure of 1.15 dB and the input 3rd order intercept point (IIP3) of 11 dBin, respectively.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
