{"title":"高密度碳纳米管微阵列的制备及其场发射特性","authors":"C. Chuang, J.H. Huang, C. Lee, Y. Chang","doi":"10.1116/1.1880132","DOIUrl":null,"url":null,"abstract":"High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of /spl sim/1800 cd/m/sup 2/ and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-/spl mu/m SiO/sub 2/ as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Fabrication and field emission characteristics of high density carbon nanotubes microarrays\",\"authors\":\"C. Chuang, J.H. Huang, C. Lee, Y. Chang\",\"doi\":\"10.1116/1.1880132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of /spl sim/1800 cd/m/sup 2/ and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-/spl mu/m SiO/sub 2/ as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/1.1880132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/1.1880132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
在硅基上制备了三极管和二极管结构的高密度碳纳米管场发射极阵列(CNT-FEA)。采用微波加热CVD工艺合成了碳纳米管。二极管型碳纳米管有限元分析的发射图像显示亮度为/spl sim/1800 cd/m/sup /，发射质量均匀。三极管型发射极的SEM横截面图显示，尽管采用了几乎相同的生长条件，但三极管结构中的碳纳米管比二极管型发射极中的碳纳米管更短，密度更低。发射极区的粗糙表面形貌表明硅化铬的形成可以增强硅衬底的导电性。三极管的发射特性表明，以1-/spl μ m SiO/sub - 2/作为间隔片，栅极可以施加极低的工作电压。因此，成功地制备了具有低导通电压和大发射电流的高密度碳纳米管场发射极阵列。
Fabrication and field emission characteristics of high density carbon nanotubes microarrays
High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of /spl sim/1800 cd/m/sup 2/ and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-/spl mu/m SiO/sub 2/ as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.
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